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Gate Drive Unit - List of Manufacturers, Suppliers, Companies and Products

Gate Drive Unit Product List

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Gate Drive Unit "VLB517-01R"

4.5kV/1500A class HVIGBT module can be driven!

The "VLB517-01R" is a single-circuit gate drive unit capable of directly driving 10.2kV insulated gate bipolar transistor (IGBT) modules in the 4.5kV/1500A class and 3.3kV/1800A class. 【Features】 ■ Built-in isolated DC-DC converter for gate drive ■ Maximum gate output peak current ±40A ■ Insulation withstand voltage 10.2kVrms for 1 minute ■ Built-in short-circuit protection circuit (with soft shutdown function) ■ Signal input/output interface compatible with optical fiber *For more details, please refer to the PDF document or feel free to contact us.

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Gate Drive Unit "VLB505-01R"

Supports parallel operation of 3300V/750A class SiC modules in 4 configurations!

The "VLB505-01R" is a single-circuit gate drive unit capable of directly paralleling SiC modules up to the 3300V/750A class. By using the adapter board VLA595-04R, it becomes easy to parallel drive LV100 packages manufactured by Mitsubishi Electric Corporation. 【Features】 ■ Built-in isolated DC-DC converter for gate drive ■ Maximum gate output peak current ±36A ■ Isolation withstand voltage 6000Vrms for 1 minute ■ Built-in short-circuit protection circuit *For more details, please refer to the PDF document or feel free to contact us.

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Gate Drive Unit "GAU240P-15405"

Supports 4 parallel drive for 1700V/1200A class IGBT modules!

The "GAU240P-15405" is a gate drive unit with two circuits that can directly drive IGBT modules up to the 1700V/3600A class. It has a built-in isolated DC-DC converter for gate driving. By using the adapter board VLA595-02R, parallel driving of Mitsubishi Electric Corporation's LV100 package is made easy. 【Features】 ■ Built-in isolated DC-DC converter for gate driving ■ Maximum gate output peak current ±40A ■ Isolation withstand voltage 4000Vrms for 1 minute ■ Built-in short-circuit protection circuit (with soft shutdown function) *For more details, please refer to the PDF document or feel free to contact us.

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Gate Drive Unit "VLA557-03R"

3300V/600A class IGBT module, capable of parallel driving with 4 units!

The "VLA557-03R" is a gate drive unit with a single circuit that can directly drive IGBT modules up to the 3300V/600A class in parallel. By using the adapter board VLA595-01R, parallel driving of Mitsubishi Electric Corporation's LV100 package becomes easier. 【Features】 ■ Built-in isolated DC-DC converter for gate drive ■ Maximum gate output peak current ±24A ■ Isolation withstand voltage 6000Vrms for 1 minute ■ Built-in short-circuit protection circuit (with soft shutdown function) *For more details, please refer to the PDF document or feel free to contact us.

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Gate Drive Unit "GAU220P-15402"

Supports parallel operation of 1700V/1200A class IGBT modules!

The "GAU220P-15402" is a gate drive unit with two circuits that can directly drive IGBT modules up to the 1700V/1800A class. By using the adapter board VLA595-02R, parallel driving of Mitsubishi Electric Corporation's LV100 package is made easy. Additionally, it features a built-in isolated DC-DC converter for gate driving, with a maximum gate output peak current of ±20A. 【Features】 ■ Built-in isolated DC-DC converter for gate driving ■ Maximum gate output peak current ±20A ■ Isolation withstand voltage of 4000Vrms for 1 minute ■ Built-in short-circuit protection circuit (with soft shutdown function) *For more details, please refer to the PDF document or feel free to contact us.

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Gate Drive Unit "VLB512/VLB519-01R"

Coordinating with the RTC signals output from the module itself, achieving short-circuit protection functionality!

The "VLB512-01R/VLB519-01R" is a gate drive unit for SiCMOSFET modules with an RTC circuit built by Mitsubishi Electric Corporation. 【Features】 ■ Simple and easy-to-handle dual-circuit gate drive system ■ Built-in short-circuit detection circuit compatible with the RTC circuit in the module ■ Built-in short-circuit protection circuit ■ Connected to the MOSFET module via harness ■ Built-in isolated DC-DC converter for gate power supply ■ Output gate peak current: +/-30A (max) ■ Isolation withstand voltage: 4000Vrms (1 minute) 【Specifications】 <VLB512-01R> ■ Gate output power: up to 10W ■ Board size: 90×145mm <VLB519-01R> ■ Gate output power: up to 3.75W ■ Board size: 80×130mm *For more details, please refer to the PDF document or feel free to contact us.

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Gate Drive Unit "VLB525/VLB526-01R"

Supports driving 1700V/600A class SiC-MOSFET modules!

The "VLB525-01R/VLB526-01R" is a gate drive unit for driving NX type SiC-MOSFET modules manufactured by Mitsubishi Electric Corporation. <Features> - Can be directly mounted on NX type SiC modules - Built-in dual gate drive circuits - Built-in isolated DC-DC converter for gate power supply - Isolation voltage withstand between input and output: 4000Vrms (for 1 minute) - Supports high-frequency switching → FMF600DXE-34BN: f=75kHz (max) → FMF600DXE-24BN: f=90kHz (max) Regarding short-circuit protection, it has been verified that protection can be achieved under certain conditions. However, the modules manufactured by Mitsubishi Electric Corporation are not guaranteed for short-circuit protection, so while the use of our driver may allow for short-circuit protection to function under certain conditions, we cannot guarantee this. We kindly ask that you evaluate it thoroughly before use. *For more details, please refer to the PDF document or feel free to contact us.

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Gate Drive Unit "VLB524-01R"

Compatible with 1200V/600A class IGBT module drive!

The "VLB524-01R" is a gate drive unit for IGBT modules that can be directly mounted on NX type and EconoDUAL type IGBT modules. This product is compatible with 1200V/600A class IGBT modules. A similar product, the "VLA598-01R," is available, which supports up to 1700V class; however, the "VLB524-01R" is specifically designed for the 1200V class, making it a more cost-effective option! It is recommended for customers aiming for low costs and those using NX type or EconoDUAL type modules. <Features> ● Can be directly mounted on NX type and EconoDUAL type modules ● Built-in dual gate drive circuits ● Built-in isolated DCDC converter for gate power supply ● Maximum gate output peak current ±9A ● Input-output isolation voltage withstand 2500Vrms (for 1 minute) ● Built-in short-circuit protection circuit (with soft shutdown function) *For more details, please refer to the PDF document or feel free to contact us.

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